RJK0212DPA mosfet equivalent, n-channel mosfet.
Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V)
* Pb-free
* Ha.
or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics.
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